BSS159N H6327

BSS159N SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 60 V RDS(on),max 8 Ω 0.13 A IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Qualified according to AEC Q101 PG-SOT-23 • 100% lead-free; Halogen-free; RoHS compliant 3 1 2 Type Package Pb-free Halogen-free Tape and Reel Information Marking BSS159N PG-SOT-23 Yes Yes H6327: 3000 pcs/reel SGs BSS159N PG-SOT-23 Yes Yes H6906: 3000 pcs/reel sorted in VGS(th) bands 1) SGs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T A=25 °C 0.23 T A=70 °C 0.18 0.92 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.23 A, V DS=60 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS ESD Class P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 1) 6 ±20 JESD22-A114 -HBM Power dissipation Value Unit A kV/µs V 0(2|I D|R DS(on)max, I D=0.16 A 0.1 0.19 - S V DS=3 V, I D=26 µA -2.6 - -2.4 V K -2.75 - -2.55 L -2.9 - -2.7 M -3.05 - -2.85 N -3.2 - -3 Transconductance g fs Threshold voltage V GS(th) sorted in bands2) J V GS(th) 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.2 page 2 2009-07-29 BSS159N Parameter Values Symbol Conditions Unit min. typ. max. - 29 39 - 7.4 10 Dynamic characteristics pF Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 3.1 5 Turn-on delay time t d(on) - 3.1 4.7 Rise time tr - 2.9 4.4 Turn-off delay time t d(off) - 9 13 Fall time tf - 9 13 Gate to source charge Q gs - 0.22 - Gate to drain charge Q gd - 0.42 - Gate charge total Qg - 1.4 - Gate plateau voltage V plateau - -0.80 - V - - 0.20 A - - 0.91 - 0.81 1.2 V - 10.4 13 ns - 3.3 4.1 nC V GS=-3 V, V DS=25 V, f =1 MHz V DD=25 V, V GS=-3…7 V, I D=0.16 A, R G=6 Ω ns Gate Charge Characteristics V DD=48 V, I D=0.16 A, V GS=-3 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 2.2 T A=25 °C V GS=-3 V, I F=0.16 A, T j=25 °C V R=30 V, I F=0.16 A, di F/dt =100 A/µs page 3 2009-07-29 BSS159N 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.4 0.24 0.2 0.3 ID [A] Ptot [W] 0.16 0.2 0.12 0.08 0.1 0.04 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: D =t p/T 100 103 10 µs limited by on-state resistance 100 µs 0.5 1 ms 10-1 102 0.2 0.1 ZthJA [K/W] ID [A] 10 ms 100 ms 0.05 0.02 0.01 10-2 single pulse 101 DC 10-3 100 100 101 102 VDS [V] Rev. 2.2 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2009-07-29 BSS159N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 10 0.6 0V -0.1 V 0.5 10 V 1V 8 0.5 V 0.1 V -0.2 V 0.2 V 0.4 0.5 V 0.2 V RDS(on) [Ω] ID [A] 0.1 V 0V 0.3 -0.1 V -0.2 V 6 4 1V 0.2 2 10 V 0.1 0 0 0 2 4 6 8 0 10 0.2 VDS [V] 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.6 0.3 0.5 0.25 0.4 0.2 gfs [S] ID [A] 0.6 0.2 0.3 ID [A] 7 Typ. transfer characteristics 0.3 0.15 0.2 0.1 0.1 0.05 0 0 -4 -3 -2 -1 0 1 VGS [V] Rev. 2.2 0.4 0.0 0.1 ID [A] page 5 2009-07-29 BSS159N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.07 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=26 µA parameter: I D 20 -2 16 -2.4 12 -2.8 VGS(th) [V] RDS(on) [Ω] max 98 % 8 typ -3.2 min typ 4 -3.6 0 -4 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-3 V; f =1 MHz 102 1 Ciss ID [mA] 0.1 M L K 26 µA 0.01 0.001 -3.5 101 J Crss 100 -3 -2.5 -2 VGS [V] Rev. 2.2 Coss C [pF] N 0 10 20 30 VDS [V] page 6 2009-07-29 BSS159N 13 Forward characteristics of reverse diode 14 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.16 A pulsed parameter: T j parameter: V DD 7 1 6 150 °C, 98% 5 25 °C 150 °C 4 25 °C, 98% 3 IF [A] VGS [V] 0.1 0.5 VDS(max) 0.2 VDS(max) 2 0.8 VDS(max) 1 0 0.01 -1 -2 -3 -4 0.001 0 0.4 0.8 0 1.2 0.5 1 1.5 2 Qgate [nC] VSD [V] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 70 V GS Qg VBR(DSS) [V] 65 60 V g s(th) 55 Q g (th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.2 page 7 2009-07-29 BSS159N SOT-23 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 2.2 page 8 2009-07-29 BSS159N Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 9 2009-07-29